1

Comment on ‘‘Atomic model for the EL 2 defect in GaAs’’

Year:
1988
Language:
english
File:
PDF, 127 KB
english, 1988
4

Minority carrier diffusion lengths in bulkn-type gaas

Year:
1987
Language:
english
File:
PDF, 368 KB
english, 1987
5

MEDICINE AND THE LAW.

Year:
1919
Language:
english
File:
PDF, 207 KB
english, 1919
6

Electrical properties of Na In GaAs

Year:
1984
Language:
english
File:
PDF, 221 KB
english, 1984
9

Variation of EL2 in Si Lec GaAs with arsenic pressure during heat treatment

Year:
1986
Language:
english
File:
PDF, 175 KB
english, 1986
10

Identification of two bands in the PL spectra of SI LEC GaAs on the basis of a strain model

Year:
1986
Language:
english
File:
PDF, 278 KB
english, 1986
11

A stress-strain model for el2 on the basis of chemical principles and its applications. I. The model

Year:
1987
Language:
english
File:
PDF, 414 KB
english, 1987
14

A note on the nature of two recombination centers in indium antimonide

Year:
1983
Language:
english
File:
PDF, 177 KB
english, 1983